CIOMP Makes Breakthrough in Anomalous Ambipolar Phototransistors Based on All-inorganic CsPbBr3 Perovskite at Room Temperature

Researchers at the Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) has made a breakthrough in the field of lead halide perovskite optoelectronic device, it is revealed.


A report from CIOMP’s Guo China-US Photonics Lab claims that researchers there have successfully synthesized CsPbBr3 microplates and fabricated high efficiency phototransistors using these high-crystallinity CsPbBr3 microplates.


Lead halide perovskites have received much attention as a novel photoactive material, and can be used in a variety of optoelectronic applications, such as solar cells, photodetectors, and light emitting diodes. Optoelectronic and electronic devices based on perovskite materials are relatively less complicated to produce and are ideal for mass production or integration into classical electronic devices. However, limited research has been carried out in field effect transistors based on perovskite materials, what have been done have reported low carrier mobility and unclear transmission mechanism.


Led by Prof. GUO Chunlei and Asso. Prof. YU Weili, researchers at the Guo China-US Photonics Lab have now successfully synthesized high quality CsPbBr3 microplate with no obvious grain boundary by the space-limited and inverse temperature crystallization strategy.


According to their report, published on Advanced Optical Materials, the thickness of the CsPbBr3 microplate they produced is about 2 μm, and the size can reach millimeter or lager, convenient for use in electronic and optoelectronic devices.


Phototransistors made with these CsPbBr3 microplates show anomalous ambipolar transport characteristics at room temperature. The hole mobility shows light dependence, while the electron mobility is identical under various light incidence. The threshold voltage in electron-transport model also shows light dependence, however the phenomenon does not exist when hole is majority charge carriers. This is the first time this phenomenon has been reported in perovskite materials.


CIOMP researchers believe that the anomalous transport behavior can be attributed to photovoltaic and photoconductive effects. Moreover, the hole (electron) mobility reached 0.34 (0.40) cm2 V-1 s-1 under light illumination with the power density of 50 mW cm-2, which is the highest value ever reported for CsPbBr3 perovskite by far.


This research is highly desirable for revealing the intrinsic transport property of CsPbBr3 material, especially for devices working under light illumination conditions, such as photovoltaics, photoconductor and light emitting devices. The relevant results are published on Advanced Optical Materials (DOI: 10.1002/adom. 201900676) under the title "Anomalous Ambipolar Phototransistors Based on All-Inorganic CsPbBr3 Perovskite at Room Temperature".




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