Location：Fourth Meeting Room, Research Building

Hosted by: State Key Laboratory of Luminescence and Applications

Report content: The development and maturity of GaN blue laser has greatly promoted the development of laser display technology and industrialization, and three pure color laser display the urgent demand of the green laser technology has also made research on GaN green laser a hot spot. In this report, I will introduce our progress in GaN green laser research, including the homoepitaxial growth of GaN materials, the growth pattern of green InGaN quantum wells and its influence on the optical properties of the interface control green InGaN quantum , the impurity incorporated into the low temperature growth of AlGaN:Mg associated with the electrical properties of the device. At last I will also introduce the characteristics we developed at room temperature for GaN green laser.