Interface Engineering for 2D Phosphorene Based Optoelectronic Devices
Topic      :Interface Engineering for 2D Phosphorene Based Optoelectronic Devices
Speaker :Prof. Wei Chen, Department of Physics National University of Singapore
Time       :March 12, 2018  10:00

Location:The Meeting Room of State Key Laboratory of luminescence and Applications

Hosted by: State Key Laboratory of luminescence and Applications

  

Abstract:

Black phosphorus (BP), as a fast-emerging two-dimensional (2D) material, stands out from other members in 2D family such as graphene and transition metal dichalcogenides (TMDs), and attracts substantial research interests attributed to its remarkably unique fundamental properties and versatile device applications. In this talk, I will summarize and discuss our recent work for interface engineered 2D materials phosphorene based field-effect-transistors (FETs) and photo-transistors, through the combination of in-situ FET device evaluation and photoelectron spectroscopy investigation. We will particularly emphasize on the electron and hole doping effect on the transport properties and optoelectronic response of phosphorene devices.

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