In ISA Transactions, researchers from the Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, report a compound anti-disturbance method for servomotor position control. The study integrates a novel adaptive sliding-mode disturbance observer (NASMDO) with an adaptive non-singular terminal sliding-mode controller (ANTSMC) to keep tracking accuracy high when disturbances change rapidly.
Inorganic Chemistry has published a study from researchers at the Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP), Chinese Academy of Sciences, reporting “Na‑assisted molecular beam epitaxy (Na‑MBE)” of monolayer MoS2 on Au(111). The team achieved single‑crystalline domains exceeding one micrometer—an order‑of‑magnitude larger than those grown by standard MBE on the same substrate—while preserving the atomic‑level control that makes MBE attractive for precisely doped two‑dimensional (2D) semiconductors.
A team of researchers from Changchun Institute of Optics, Fine Mechanics and Physics at the Chinese Academy of Sciences developed a method to improve the stability and performance of perovskite photodetectors by controlling crystal facet orientation with carbon dots (CDs).
Researchers from the Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, and collaborating institutions, reporting in ACS Applied Materials & Interfaces, have demonstrated a novel method to generate spin-dependent electrical currents at room temperature by precisely controlling the symmetry at the interface between two atomically thin materials.
Published in Molecules by MDPI, a study led by researchers from the Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) at the Chinese Academy of Sciences (CAS) demonstrated how deep learning can streamline the identification of atomic-scale defects in molybdenum disulfide, a promising two-dimensional (2D) material for next-generation electronics.
Published in Physical Review Letters by the American Physical Society, a recent study from the Changchun Institute of Optics, Fine Mechanics and Physics (CIOMP) at the Chinese Academy of Sciences (CAS) demonstrated how nitrogen vacancies can resolve asymmetric carrier injection in GaN-based light-emitting diodes (LEDs), offering a practical solution to enhance device efficiency.
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